Download Characterization of Crystal Growth Defects by X-Ray Methods by Eugene S. Meieran (auth.), Dr. Brian K. Tanner, Dr. D. Keith PDF

By Eugene S. Meieran (auth.), Dr. Brian K. Tanner, Dr. D. Keith Bowen (eds.)

This booklet comprises the lawsuits of a NATO complex learn Institute entitled "Characterization of Crystal development Defects through X-ray equipment' held within the collage of Durham, England from twenty ninth August to tenth September 1979. the present curiosity in digital fabrics, particularly silicon, gallium aluminium arsenide, and quartz, and the new availability of synchrotron radiation for X-ray diffraction experiences made this complex research Institute fairly well timed. major subject matters ran during the path: 1. A survey of a few of the forms of disorder happening in crystal progress, the mechanism in their diverse tools of iteration and their effect at the houses of fairly ideal crystals. 2. an in depth and complicated direction at the statement and characterization of such defects through X-ray equipment. the most emphasis used to be on X-ray topographic ideas yet quite a lot of time used to be spent on goniometric strategies resembling double crystal diffractometry and gamma ray diffraction. The presentation of fabric during this booklet displays those dual issues. part A is worried with defects, part C with suggestions and in linking them. part B offers a concise account of the elemental idea precious for the translation of X-ray topographs and diffractometric facts. even if the series follows approximately the order of presentation on the complex examine Institute sure significant adjustments were made so that it will enhance the pedagogy. particularly, the 1st chapters supply an important, and rarely articulated, case for the necessity for characterization for crystals utilized in gadget technologies.

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Additional resources for Characterization of Crystal Growth Defects by X-Ray Methods

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Move along the pattern Figure 8. 2 Device architecture All bubble devices are based on shift register type operation but in order to reduce the access time and to increase the yield of acceptable devices several refinements over having one long register have been devised. 9). A page of data is written serially into the major loop via 157 MINOR lOOPS - 6'1 BUBBLL POSITIONS PElllOOP 157 156 Figure 9. D. MILNE the generator and is transferred in parallel to the minor loops by means of the gates. To read the data it has to be transferred back onto the major loop, replicated into the detector and returned to the minor loops.

1. According to Fig. 1, 125 mm silicon, sapphire and garnet wafers will be in production in the early 1980's. Any X-ray technique that is used to analyze materials in a production atmosphere must be able to cope with such large wafers. At present neither commercial single crystal cameras nor double crystal cameras are so constructed. Even X-ray generator tables are small compared to the sizes needed for large size cameras. X-ray techniques must be able to handle the coming materials - at present they are barely able to deal with existing wafer sizes, and there is little evidence to suggest that larger wafers may be handled.

Haze has been attributed to a number of causes, so not only the effects of the defect on yields, but also the precise nature of the defect, is unknown. An example of haze is shown in Fig. 6. Table 3 CURRENT INDUSTRIAL DEFECT DETECTION METHODS AND ACCEPTANCE CRITERIA DEFECT PRE-TREATMENT METHOD CRITERION Dislocations None Sirt! Etch Zero dislocations Scratches None Visual Zero scratches Haze None Seeco etch "no haze" Swirl Multi-stage oxidation Seeco Etch No heavy swirl Precipitates None Etch Variable Two major difficulties associated with incoming inspection are immediately apparent; the cost is large due to the destructive nature of the tests, and many tests are not objective.

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