Download Amorphous Silicon / Crystalline Silicon Heterojunction Solar by Wolfgang Rainer Fahrner (auth.), Wolfgang Rainer Fahrner PDF

By Wolfgang Rainer Fahrner (auth.), Wolfgang Rainer Fahrner (eds.)

Amorphous Silicon/Crystalline Silicon sun Cells offers with a few standard homes of heterojunction sunlight cells, equivalent to their heritage, the houses and the demanding situations of the cells, a few vital measurementtools, a few simulation courses and a quick survey of the cutting-edge, aiming to supply an preliminary framework during this box and function a prepared reference for all these attracted to the topic. This booklet is helping to “fill within the blanks” on heterojunction sun cells. Readers will obtain a complete evaluate of the foundations, buildings, processing innovations and the present developmental states of the units.

Prof. Dr. Wolfgang R. Fahrner is a professor on the collage of Hagen, Germany and Nanchang college, China.

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Amorphous Silicon / Crystalline Silicon Heterojunction Solar Cells

Amorphous Silicon/Crystalline Silicon sun Cells offers with a few usual homes of heterojunction sunlight cells, similar to their background, the homes and the demanding situations of the cells, a few vital measurementtools, a few simulation courses and a quick survey of the cutting-edge, aiming to supply an preliminary framework during this box and function a prepared reference for all these attracted to the topic.

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1 Conventional n a-Si:H/p c-Si Cell Compared to a monocrystalline pn-junction solar cell, for the most basic form of an a-Si:H/c-Si heterojunction solar cell, the n-type diffused emitter is replaced by an n-type a-Si:H layer covered with a TCO layer to provide sufficient lateral conductivity, whereas the rear contact with BSF-passivation stays the same [80–82]. With this first model (Fig. 18) of a-Si:H/c-Si heterojunction solar cells, an efficiency of over 15 % has been demonstrated [83, 84]. This new emitter at the front gains two main advantages: Higher transparency of the light-entrance window, higher open-circuit voltage, due to the larger bandgap of the a-Si:H.

155], the carrier density can be expressed as dDnðtÞ 1 ¼ GðtÞ À U ðtÞ þ DJ dt q ð18Þ For the case of a homogeneous distributed carrier density, or homogeneous generation rate G, the last term in Eq. 18 is negligible. Bearing in mind that Ueff = Dn/seff, the effective lifetime can be written as seff ¼ DnðtÞ G À dDnðtÞ dt ð19Þ This expression reduces to the transient expression in case G = 0, and to the QSS case when dDn/dt = 0. QSSPC As for the QSSPC method, the carrier lifetime can be obtained via the photoconductance based on the following method.

3 a-Si:H Passivation Scheme Excellent surface passivation abilities of non-doped a-Si:H(i) films on c-Si have been intensively investigated by other research institutes and confirmed by various methods, cf. [123–125]. Dauwe et al. [126] published very low surface recombination velocities on p- and n-type silicon wafers passivated with hydrogenated amorphous silicon films. Silicon material of both conduction types can be effectively passivated. Wang et al. [127] investigated a-Si:H/c-Si heterointerfaces, stating that they necessitate an immediate a-Si:H deposition and an abrupt and flat interface to the c-Si substrate.

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